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IPS65R1K0CEAKMA1

Infineon Technologies
IPS65R1K0CEAKMA1 HongDa Electronics IPS65R1K0CEAKMA1
  • Manufacturer Part# IPS65R1K0CEAKMA1
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 650V 4.3A TO-251-3
  • More DetailN-Channel 650V 4.3A (Tc) 37W (Tc) Through Hole TO-...
In Stock: 1000

Can ship immediately

Datasheet:
IPS65R1K0CEAKMA1 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:3.5V @ 200µA
  • Package / Case:TO-251-3 Stub Leads, IPak
  • Supplier Device Package:TO-251
  • Mounting Type:Through Hole
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Power Dissipation (Max):37W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:328pF @ 100V
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:15.3nC @ 10V

 

  • Series:CoolMOS™ CE
  • Rds On (Max) @ Id, Vgs:1 Ohm @ 1.5A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:4.3A (Tc)
  • Drain to Source Voltage (Vdss):650V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Not For New Designs
  • Packaging:Tube 

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