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IPS65R1K0CEAKMA2

Infineon Technologies
IPS65R1K0CEAKMA2 HongDa Electronics IPS65R1K0CEAKMA2
  • Manufacturer Part# IPS65R1K0CEAKMA2
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionCONSUMER
  • More DetailN-Channel 650V 7.2A (Tc) 68W (Tc) Through Hole PG-...
In Stock: 1000

Can ship immediately

Datasheet:
IPS65R1K0CEAKMA2 Datasheet

Technical Details

  • Gate Charge (Qg) (Max) @ Vgs:15.3nC @ 10V
  • Package / Case:TO-251-3 Stub Leads, IPak
  • Supplier Device Package:PG-TO251-3
  • Mounting Type:Through Hole
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):68W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:328pF @ 100V
  • Vgs (Max):±20V
  • Series:CoolMOS™ CE

 

  • Vgs(th) (Max) @ Id:3.5V @ 200µA
  • Rds On (Max) @ Id, Vgs:1 Ohm @ 1.5A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:7.2A (Tc)
  • Drain to Source Voltage (Vdss):650V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active

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