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IRF200B211

Infineon Technologies
IRF200B211 HongDa Electronics IRF200B211
  • Manufacturer Part# IRF200B211
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 200V 12A TO-220AB
  • More DetailN-Channel 200V 12A (Tc) 80W (Tc) Through Hole TO-2...
In Stock: 2770

Can ship immediately

Datasheet:
IRF200B211 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:4.9V @ 50µA
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220AB
  • Mounting Type:Through Hole
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Power Dissipation (Max):80W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:790pF @ 50V
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:23nC @ 10V

 

  • Series:HEXFET®, StrongIRFET™
  • Rds On (Max) @ Id, Vgs:170 mOhm @ 7.2A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:12A (Tc)
  • Drain to Source Voltage (Vdss):200V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active
  • Packaging:Tube 

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