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IRF200P222

Infineon Technologies
IRF200P222 HongDa Electronics IRF200P222
  • Manufacturer Part# IRF200P222
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 200V 182A TO247AC
  • More DetailN-Channel 200V 182A (Tc) 556W (Tc) Through Hole TO...
In Stock: 391

Can ship immediately

Datasheet:
IRF200P222 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:4V @ 270µA
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247AC
  • Mounting Type:Through Hole
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Power Dissipation (Max):556W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:9820pF @ 50V
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:203nC @ 10V

 

  • Series:StrongIRFET™
  • Rds On (Max) @ Id, Vgs:6.6 mOhm @ 82A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:182A (Tc)
  • Drain to Source Voltage (Vdss):200V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active
  • Packaging:Tube 

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