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IRF6215L

Infineon Technologies
IRF6215L HongDa Electronics IRF6215L
  • Manufacturer Part# IRF6215L
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET P-CH 150V 13A TO-262
  • More DetailP-Channel 150V 13A (Tc) 3.8W (Ta), 110W (Tc) Throu...
In Stock: 1000

Can ship immediately

Datasheet:
IRF6215L Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
  • Supplier Device Package:TO-262
  • Mounting Type:Through Hole
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Power Dissipation (Max):3.8W (Ta), 110W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:860pF @ 25V
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:66nC @ 10V

 

  • Series:HEXFET®
  • Rds On (Max) @ Id, Vgs:290 mOhm @ 6.6A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:13A (Tc)
  • Drain to Source Voltage (Vdss):150V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:P-Channel
  • Part Status:Obsolete
  • Packaging:Tube 

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