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IRF640NLPBF

Infineon Technologies
IRF640NLPBF HongDa Electronics IRF640NLPBF
  • Manufacturer Part# IRF640NLPBF
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 200V 18A TO-262
  • More DetailN-Channel 200V 18A (Tc) 150W (Tc) Through Hole TO-...
In Stock: 1171

Can ship immediately

Datasheet:
IRF640NLPBF Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
  • Supplier Device Package:TO-262
  • Mounting Type:Through Hole
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Power Dissipation (Max):150W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:1160pF @ 25V
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:67nC @ 10V

 

  • Series:HEXFET®
  • Rds On (Max) @ Id, Vgs:150 mOhm @ 11A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:18A (Tc)
  • Drain to Source Voltage (Vdss):200V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active
  • Packaging:Tube 

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