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IRF6643TR1PBF

Infineon Technologies
IRF6643TR1PBF HongDa Electronics IRF6643TR1PBF
  • Manufacturer Part# IRF6643TR1PBF
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 150V 6.2A DIRECTFET
  • More DetailN-Channel 150V 6.2A (Ta), 35A (Tc) 2.8W (Ta), 89W ...
In Stock: 1000

Can ship immediately

Datasheet:
IRF6643TR1PBF Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:4.9V @ 150µA
  • Package / Case:DirectFET™ Isometric MZ
  • Supplier Device Package:DIRECTFET™ MZ
  • Mounting Type:Surface Mount
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Power Dissipation (Max):2.8W (Ta), 89W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:2340pF @ 25V
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:55nC @ 10V

 

  • Series:HEXFET®
  • Rds On (Max) @ Id, Vgs:34.5 mOhm @ 7.6A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:6.2A (Ta), 35A (Tc)
  • Drain to Source Voltage (Vdss):150V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Obsolete
  • Packaging:Tape & Reel (TR) 

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