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IRF6893MTR1PBF

Infineon Technologies
IRF6893MTR1PBF HongDa Electronics IRF6893MTR1PBF
  • Manufacturer Part# IRF6893MTR1PBF
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 25V 29A MX
  • More DetailN-Channel 25V 29A (Ta), 168A (Tc) 2.1W (Ta), 69W (...
In Stock: 1000

Can ship immediately

Datasheet:
IRF6893MTR1PBF Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:2.1V @ 100µA
  • Package / Case:DirectFET™ Isometric MX
  • Supplier Device Package:DIRECTFET™ MX
  • Mounting Type:Surface Mount
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Power Dissipation (Max):2.1W (Ta), 69W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:3480pF @ 13V
  • Vgs (Max):±16V
  • Gate Charge (Qg) (Max) @ Vgs:38nC @ 4.5V

 

  • Series:HEXFET®
  • Rds On (Max) @ Id, Vgs:1.6 mOhm @ 29A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Current - Continuous Drain (Id) @ 25°C:29A (Ta), 168A (Tc)
  • Drain to Source Voltage (Vdss):25V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Obsolete
  • Packaging:Tape & Reel (TR) 

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