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IRF6798MTRPBF

Infineon Technologies
IRF6798MTRPBF HongDa Electronics IRF6798MTRPBF
  • Manufacturer Part# IRF6798MTRPBF
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 25V 37A DIRECTFET-MX
  • More DetailN-Channel 25V 37A (Ta), 197A (Tc) 2.8W (Ta), 78W (...
In Stock: 1000

Can ship immediately

Datasheet:
IRF6798MTRPBF Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:2.35V @ 150µA
  • Package / Case:DirectFET™ Isometric MX
  • Supplier Device Package:DIRECTFET™ MX
  • Mounting Type:Surface Mount
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Power Dissipation (Max):2.8W (Ta), 78W (Tc)
  • FET Feature:Schottky Diode (Body)
  • Input Capacitance (Ciss) (Max) @ Vds:6560pF @ 13V
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:75nC @ 4.5V

 

  • Series:HEXFET®
  • Rds On (Max) @ Id, Vgs:1.3 mOhm @ 37A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Current - Continuous Drain (Id) @ 25°C:37A (Ta), 197A (Tc)
  • Drain to Source Voltage (Vdss):25V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Obsolete
  • Packaging:Tape & Reel (TR) 

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