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IRF6645TR1PBF

Infineon Technologies
IRF6645TR1PBF HongDa Electronics IRF6645TR1PBF
  • Manufacturer Part# IRF6645TR1PBF
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 100V 5.7A DIRECTFET
  • More DetailN-Channel 100V 5.7A (Ta), 25A (Tc) 2.2W (Ta), 42W ...
In Stock: 1000

Can ship immediately

Datasheet:
IRF6645TR1PBF Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:4.9V @ 50µA
  • Package / Case:DirectFET™ Isometric SJ
  • Supplier Device Package:DIRECTFET™ SJ
  • Mounting Type:Surface Mount
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Power Dissipation (Max):2.2W (Ta), 42W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:890pF @ 25V
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:20nC @ 10V

 

  • Series:HEXFET®
  • Rds On (Max) @ Id, Vgs:35 mOhm @ 5.7A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:5.7A (Ta), 25A (Tc)
  • Drain to Source Voltage (Vdss):100V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Obsolete
  • Packaging:Tape & Reel (TR) 

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