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IRF6709S2TRPBF

Infineon Technologies
IRF6709S2TRPBF HongDa Electronics IRF6709S2TRPBF
  • Manufacturer Part# IRF6709S2TRPBF
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 25V 12A DIRECTFET-S1
  • More DetailN-Channel 25V 12A (Ta), 39A (Tc) 1.8W (Ta), 21W (T...
In Stock: 1000

Can ship immediately

Datasheet:
IRF6709S2TRPBF Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:2.35V @ 25µA
  • Package / Case:DirectFET™ Isometric S1
  • Supplier Device Package:DIRECTFET S1
  • Mounting Type:Surface Mount
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Power Dissipation (Max):1.8W (Ta), 21W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:1010pF @ 13V
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:12nC @ 4.5V

 

  • Series:HEXFET®
  • Rds On (Max) @ Id, Vgs:7.8 mOhm @ 12A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Current - Continuous Drain (Id) @ 25°C:12A (Ta), 39A (Tc)
  • Drain to Source Voltage (Vdss):25V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Obsolete
  • Packaging:Tape & Reel (TR) 

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