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IRF6718L2TR1PBF

Infineon Technologies
IRF6718L2TR1PBF HongDa Electronics IRF6718L2TR1PBF
  • Manufacturer Part# IRF6718L2TR1PBF
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 25V 61A DIRECTFET L6
  • More DetailN-Channel 25V 61A (Ta), 270A (Tc) 4.3W (Ta), 83W (...
In Stock: 1000

Can ship immediately

Datasheet:
IRF6718L2TR1PBF Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:2.35V @ 150µA
  • Package / Case:DirectFET™ Isometric L6
  • Supplier Device Package:DIRECTFET L6
  • Mounting Type:Surface Mount
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Power Dissipation (Max):4.3W (Ta), 83W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:6500pF @ 13V
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:96nC @ 4.5V

 

  • Series:HEXFET®
  • Rds On (Max) @ Id, Vgs:0.7 mOhm @ 61A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Current - Continuous Drain (Id) @ 25°C:61A (Ta), 270A (Tc)
  • Drain to Source Voltage (Vdss):25V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Obsolete
  • Packaging:Tape & Reel (TR) 

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