IRFD020PBF Vishay Siliconix | HongDa Electronics

IRFD020PBF HongDa Electronics

Manufacturer Part# IRFD020PBF
Product CategoryDiscrete Semiconductor Products
Short DescriptionMOSFET N-CH 50V 2.4A 4-DIP
More DetailN-Channel 50V 2.4A (Tc) 1W (Tc) Through Hole 4-DIP...

In Stock: 1337

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Datasheet:

IRFD020PBF Datasheet

Technical Details

Vgs(th) (Max) @ Id:4V @ 250µA
Package / Case:4-DIP (0.300", 7.62mm)
Supplier Device Package:4-DIP, Hexdip, HVMDIP
Mounting Type:Through Hole
Operating Temperature:-55°C ~ 150°C (TJ)
Power Dissipation (Max):1W (Tc)
FET Feature:--
Input Capacitance (Ciss) (Max) @ Vds:400pF @ 25V
Vgs (Max):±20V
Gate Charge (Qg) (Max) @ Vgs:24nC @ 10V

Series:--
Rds On (Max) @ Id, Vgs:100 mOhm @ 1.4A, 10V
Drive Voltage (Max Rds On, Min Rds On):10V
Current - Continuous Drain (Id) @ 25°C:2.4A (Tc)
Drain to Source Voltage (Vdss):50V
Technology:MOSFET (Metal Oxide)
FET Type:N-Channel
Part Status:Active
Packaging:Tube

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