IRFD210 Vishay Siliconix | HongDa Electronics

IRFD210 HongDa Electronics

Manufacturer Part# IRFD210
Product CategoryDiscrete Semiconductor Products
Short DescriptionMOSFET N-CH 200V 600MA 4-DIP
More DetailN-Channel 200V 600mA (Ta) 1W (Ta) Through Hole 4-D...

In Stock: 1000

Can ship immediately

Datasheet:

IRFD210 Datasheet

Technical Details

Vgs(th) (Max) @ Id:4V @ 250µA
Package / Case:4-DIP (0.300", 7.62mm)
Supplier Device Package:4-DIP, Hexdip, HVMDIP
Mounting Type:Through Hole
Operating Temperature:-55°C ~ 150°C (TJ)
Power Dissipation (Max):1W (Ta)
FET Feature:--
Input Capacitance (Ciss) (Max) @ Vds:140pF @ 25V
Vgs (Max):±20V
Gate Charge (Qg) (Max) @ Vgs:8.2nC @ 10V

Series:--
Rds On (Max) @ Id, Vgs:1.5 Ohm @ 360mA, 10V
Drive Voltage (Max Rds On, Min Rds On):10V
Current - Continuous Drain (Id) @ 25°C:600mA (Ta)
Drain to Source Voltage (Vdss):200V
Technology:MOSFET (Metal Oxide)
FET Type:N-Channel
Part Status:Obsolete
Packaging:Tube

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