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IRFD9010

Vishay Siliconix
IRFD9010 HongDa Electronics IRFD9010
  • Manufacturer Part# IRFD9010
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET P-CH 50V 1.1A 4-DIP
  • More DetailP-Channel 50V 1.1A (Tc) 1W (Tc) Through Hole 4-DIP...
In Stock: 1000

Can ship immediately

Datasheet:
IRFD9010 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Package / Case:4-DIP (0.300", 7.62mm)
  • Supplier Device Package:4-DIP, Hexdip, HVMDIP
  • Mounting Type:Through Hole
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):1W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:240pF @ 25V
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:11nC @ 10V

 

  • Series:--
  • Rds On (Max) @ Id, Vgs:500 mOhm @ 580mA, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:1.1A (Tc)
  • Drain to Source Voltage (Vdss):50V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:P-Channel
  • Part Status:Active
  • Packaging:Tube 

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