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IRFS4229PBF

Infineon Technologies
IRFS4229PBF HongDa Electronics IRFS4229PBF
  • Manufacturer Part# IRFS4229PBF
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 250V 45A D2PAK
  • More DetailN-Channel 250V 45A (Tc) 330W (Tc) Surface Mount D2...
In Stock: 1123

Can ship immediately

Datasheet:
IRFS4229PBF Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:5V @ 250µA
  • Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package:D2PAK
  • Mounting Type:Surface Mount
  • Operating Temperature:-40°C ~ 175°C (TJ)
  • Power Dissipation (Max):330W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:4560pF @ 25V
  • Vgs (Max):±30V
  • Gate Charge (Qg) (Max) @ Vgs:110nC @ 10V

 

  • Series:HEXFET®
  • Rds On (Max) @ Id, Vgs:48 mOhm @ 26A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:45A (Tc)
  • Drain to Source Voltage (Vdss):250V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Discontinued at Digi-Key
  • Packaging:Tube 

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