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IRFSL5615PBF

Infineon Technologies
IRFSL5615PBF HongDa Electronics IRFSL5615PBF
  • Manufacturer Part# IRFSL5615PBF
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 150V 33A TO-262
  • More DetailN-Channel 150V 33A (Tc) 144W (Tc) Through Hole TO-...
In Stock: 1000

Can ship immediately

Datasheet:
IRFSL5615PBF Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:5V @ 100µA
  • Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
  • Supplier Device Package:TO-262
  • Mounting Type:Through Hole
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Power Dissipation (Max):144W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:1750pF @ 50V
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:40nC @ 10V

 

  • Series:--
  • Rds On (Max) @ Id, Vgs:42 mOhm @ 21A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:33A (Tc)
  • Drain to Source Voltage (Vdss):150V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active
  • Packaging:Tube 

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