IRLI630G Vishay Siliconix | HongDa Electronics

IRLI630G HongDa Electronics

Manufacturer Part# IRLI630G
Product CategoryDiscrete Semiconductor Products
Short DescriptionMOSFET N-CH 200V 6.2A TO220FP
More DetailN-Channel 200V 6.2A (Tc) 35W (Tc) Through Hole TO-...

In Stock: 1000

Can ship immediately

Datasheet:

IRLI630G Datasheet

Technical Details

Vgs(th) (Max) @ Id:2V @ 250µA
Package / Case:TO-220-3 Full Pack, Isolated Tab
Supplier Device Package:TO-220-3
Mounting Type:Through Hole
Operating Temperature:-55°C ~ 150°C (TJ)
Power Dissipation (Max):35W (Tc)
FET Feature:--
Input Capacitance (Ciss) (Max) @ Vds:1100pF @ 25V
Vgs (Max):±10V
Gate Charge (Qg) (Max) @ Vgs:40nC @ 10V

Series:--
Rds On (Max) @ Id, Vgs:400 mOhm @ 3.7A, 5V
Drive Voltage (Max Rds On, Min Rds On):4V, 5V
Current - Continuous Drain (Id) @ 25°C:6.2A (Tc)
Drain to Source Voltage (Vdss):200V
Technology:MOSFET (Metal Oxide)
FET Type:N-Channel
Part Status:Obsolete
Packaging:Tube

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