IRLIB4343 Infineon Technologies | HongDa Electronics

IRLIB4343 HongDa Electronics

Manufacturer Part# IRLIB4343
Product CategoryDiscrete Semiconductor Products
Short DescriptionMOSFET N-CH 55V 19A TO220FP
More DetailN-Channel 55V 19A (Tc) 39W (Tc) Through Hole TO-22...

In Stock: 1000

Can ship immediately

Datasheet:

IRLIB4343 Datasheet

Technical Details

Vgs(th) (Max) @ Id:1V @ 250µA
Package / Case:TO-220-3 Full Pack
Supplier Device Package:TO-220AB Full-Pak
Mounting Type:Through Hole
Operating Temperature:-40°C ~ 175°C (TJ)
Power Dissipation (Max):39W (Tc)
FET Feature:--
Input Capacitance (Ciss) (Max) @ Vds:740pF @ 50V
Vgs (Max):±20V
Gate Charge (Qg) (Max) @ Vgs:42nC @ 10V

Series:HEXFET®
Rds On (Max) @ Id, Vgs:50 mOhm @ 4.7A, 10V
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:19A (Tc)
Drain to Source Voltage (Vdss):55V
Technology:MOSFET (Metal Oxide)
FET Type:N-Channel
Part Status:Obsolete
Packaging:Tube

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