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IRLS640A

ON Semiconductor
IRLS640A HongDa Electronics IRLS640A
  • Manufacturer Part# IRLS640A
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 200V 9.8A TO-220F
  • More DetailN-Channel 200V 9.8A (Tc) 40W (Tc) Through Hole TO-...
In Stock: 2

Can ship immediately

Datasheet:
IRLS640A Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:2V @ 250µA
  • Package / Case:TO-220-3 Full Pack
  • Supplier Device Package:TO-220F
  • Mounting Type:Through Hole
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):40W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:1705pF @ 25V
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:56nC @ 5V

 

  • Series:--
  • Rds On (Max) @ Id, Vgs:180 mOhm @ 4.9A, 5V
  • Drive Voltage (Max Rds On, Min Rds On):5V
  • Current - Continuous Drain (Id) @ 25°C:9.8A (Tc)
  • Drain to Source Voltage (Vdss):200V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active
  • Packaging:Tube 

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