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IRLSL4030PBF

Infineon Technologies
IRLSL4030PBF HongDa Electronics IRLSL4030PBF
  • Manufacturer Part# IRLSL4030PBF
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 100V 180A TO-262
  • More DetailN-Channel 100V 180A (Tc) 370W (Tc) Through Hole TO...
In Stock: 103

Can ship immediately

Datasheet:
IRLSL4030PBF Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:2.5V @ 250µA
  • Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
  • Supplier Device Package:TO-262
  • Mounting Type:Through Hole
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Power Dissipation (Max):370W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:11360pF @ 50V
  • Vgs (Max):±16V
  • Gate Charge (Qg) (Max) @ Vgs:130nC @ 4.5V

 

  • Series:HEXFET®
  • Rds On (Max) @ Id, Vgs:4.3 mOhm @ 110A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Current - Continuous Drain (Id) @ 25°C:180A (Tc)
  • Drain to Source Voltage (Vdss):100V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active
  • Packaging:Tube 

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