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IXFN110N85X

IXYS
IXFN110N85X HongDa Electronics IXFN110N85X
  • Manufacturer Part# IXFN110N85X
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 850V 110A SOT227B
  • More DetailN-Channel 850V 110A (Tc) 1170W (Tc) Chassis Mount ...
In Stock: 1000

Can ship immediately

Datasheet:
IXFN110N85X Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:5.5V @ 8mA
  • Package / Case:SOT-227-4, miniBLOC
  • Supplier Device Package:SOT-227B
  • Mounting Type:Chassis Mount
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):1170W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:17000pF @ 25V
  • Vgs (Max):±30V
  • Gate Charge (Qg) (Max) @ Vgs:425nC @ 10V

 

  • Series:HiPerFET™
  • Rds On (Max) @ Id, Vgs:33 mOhm @ 55A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:110A (Tc)
  • Drain to Source Voltage (Vdss):850V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active
  • Packaging:Tube 

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