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IXFN360N10T

IXYS
IXFN360N10T HongDa Electronics IXFN360N10T
  • Manufacturer Part# IXFN360N10T
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 100V 360A SOT-227B
  • More DetailN-Channel 100V 360A (Tc) 830W (Tc) Chassis Mount S...
In Stock: 453

Can ship immediately

Datasheet:
IXFN360N10T Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:4.5V @ 250µA
  • Package / Case:SOT-227-4, miniBLOC
  • Supplier Device Package:SOT-227B
  • Mounting Type:Chassis Mount
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Power Dissipation (Max):830W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:36000pF @ 25V
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:505nC @ 10V

 

  • Series:HiPerFET™
  • Rds On (Max) @ Id, Vgs:2.6 mOhm @ 180A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:360A (Tc)
  • Drain to Source Voltage (Vdss):100V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active
  • Packaging:Tube 

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