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IXFN170N65X2

IXYS
IXFN170N65X2 HongDa Electronics IXFN170N65X2
  • Manufacturer Part# IXFN170N65X2
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH
  • More DetailN-Channel 650V 170A (Tc) 1170W (Tc) Chassis Mount ...
In Stock: 1000

Can ship immediately

Datasheet:
IXFN170N65X2 Datasheet

Technical Details

  • Gate Charge (Qg) (Max) @ Vgs:434nC @ 10V
  • Package / Case:SOT-227-4, miniBLOC
  • Supplier Device Package:SOT-227B
  • Mounting Type:Chassis Mount
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):1170W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:27000pF @ 25V
  • Vgs (Max):±30V
  • Series:HiPerFET™

 

  • Vgs(th) (Max) @ Id:5V @ 8mA
  • Rds On (Max) @ Id, Vgs:13 mOhm @ 85A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:170A (Tc)
  • Drain to Source Voltage (Vdss):650V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active

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