IXFY36N20X3

Technical Details

• Gate Charge (Qg) (Max) @ Vgs:21nC @ 10V
• Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package:TO-252AA
• Mounting Type:Surface Mount
• Operating Temperature:-55°C ~ 150°C (TJ)
• Power Dissipation (Max):176W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:1425pF @ 25V
• Vgs (Max):±20V
• Series:HiPerFET™

• Vgs(th) (Max) @ Id:4.5V @ 500µA
• Rds On (Max) @ Id, Vgs:45 mOhm @ 18A, 10V
• Drive Voltage (Max Rds On, Min Rds On):10V
• Current - Continuous Drain (Id) @ 25°C:36A (Tc)
• Drain to Source Voltage (Vdss):200V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Active