IXFY4N60P3

Technical Details

• Vgs(th) (Max) @ Id:5V @ 250µA
• Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package:TO-252
• Mounting Type:Surface Mount
• Operating Temperature:-55°C ~ 150°C (TJ)
• Power Dissipation (Max):114W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:365pF @ 25V
• Vgs (Max):±30V
• Gate Charge (Qg) (Max) @ Vgs:6.9nC @ 10V

• Series:HiPerFET™, Polar3™
• Rds On (Max) @ Id, Vgs:2.2 Ohm @ 2A, 10V
• Drive Voltage (Max Rds On, Min Rds On):10V
• Current - Continuous Drain (Id) @ 25°C:4A (Tc)
• Drain to Source Voltage (Vdss):600V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Active
• Packaging:Tube