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IXTR170P10P

IXYS
IXTR170P10P HongDa Electronics IXTR170P10P
  • Manufacturer Part# IXTR170P10P
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET P-CH 100V 108A ISOPLUS247
  • More DetailP-Channel 100V 108A (Tc) 312W (Tc) Through Hole IS...
In Stock: 147

Can ship immediately

Datasheet:
IXTR170P10P Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:4V @ 1mA
  • Package / Case:ISOPLUS247™
  • Supplier Device Package:ISOPLUS247™
  • Mounting Type:Through Hole
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):312W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:12600pF @ 25V
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:240nC @ 10V

 

  • Series:PolarP™
  • Rds On (Max) @ Id, Vgs:13 mOhm @ 85A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:108A (Tc)
  • Drain to Source Voltage (Vdss):100V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:P-Channel
  • Part Status:Active
  • Packaging:Tube 

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