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IXTR200N10P Discrete Semiconductor Products

IXYS
IXTR200N10P HongDa Electronics IXTR200N10P
  • Manufacturer Part# IXTR200N10P
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 100V 120A ISOPLUS247
  • More DetailN-Channel 100V 120A (Tc) 300W (Tc) Through Hole IS...
In Stock: 1000

Can ship immediately

Datasheet:
IXTR200N10P Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:5V @ 500µA
  • Package / Case:ISOPLUS247™
  • Supplier Device Package:ISOPLUS247™
  • Mounting Type:Through Hole
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Power Dissipation (Max):300W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:7600pF @ 25V
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:235nC @ 10V

 

  • Series:HiPerFET™, PolarP2™
  • Rds On (Max) @ Id, Vgs:8 mOhm @ 60A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:120A (Tc)
  • Drain to Source Voltage (Vdss):100V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active
  • Packaging:Tube 

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