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NTD5862N-1G

ON Semiconductor
NTD5862N-1G HongDa Electronics NTD5862N-1G
  • Manufacturer Part# NTD5862N-1G
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 60V 90A DPAK
  • More DetailN-Channel 60V 98A (Tc) 115W (Tc) Surface Mount DPA...
In Stock: 1000

Can ship immediately

Datasheet:
NTD5862N-1G Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package:DPAK
  • Mounting Type:Surface Mount
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Power Dissipation (Max):115W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:6000pF @ 25V
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:82nC @ 10V

 

  • Series:--
  • Rds On (Max) @ Id, Vgs:5.7 mOhm @ 45A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:98A (Tc)
  • Drain to Source Voltage (Vdss):60V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Obsolete
  • Packaging:Tube 

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