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NTD5865N-1G

ON Semiconductor
NTD5865N-1G HongDa Electronics NTD5865N-1G
  • Manufacturer Part# NTD5865N-1G
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 60V 43A DPAK
  • More DetailN-Channel 60V 43A (Tc) 71W (Tc) Surface Mount DPAK
In Stock: 1000

Can ship immediately

Datasheet:
NTD5865N-1G Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package:DPAK
  • Mounting Type:Surface Mount
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Power Dissipation (Max):71W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:1261pF @ 25V
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:23nC @ 10V

 

  • Series:--
  • Rds On (Max) @ Id, Vgs:18 mOhm @ 20A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:43A (Tc)
  • Drain to Source Voltage (Vdss):60V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Obsolete
  • Packaging:Tube 

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