PMXB360ENEAZ Discrete Semiconductor Products

Technical Details

• Vgs(th) (Max) @ Id:2.7V @ 250µA
• Package / Case:3-XDFN Exposed Pad
• Supplier Device Package:DFN1010D-3
• Mounting Type:Surface Mount
• Operating Temperature:-55°C ~ 150°C (TJ)
• Power Dissipation (Max):400mW (Ta), 6.25W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:130pF @ 40V
• Vgs (Max):±20V
• Gate Charge (Qg) (Max) @ Vgs:4.5nC @ 10V

• Series:--
• Rds On (Max) @ Id, Vgs:450 mOhm @ 1.1A, 10V
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Current - Continuous Drain (Id) @ 25°C:1.1A (Ta)
• Drain to Source Voltage (Vdss):80V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Active
• Packaging:Tape & Reel (TR)