PMXB65UPEZ Discrete Semiconductor Products

Technical Details

• Vgs(th) (Max) @ Id:1V @ 250µA
• Package / Case:3-XDFN Exposed Pad
• Supplier Device Package:DFN1010D-3
• Mounting Type:Surface Mount
• Operating Temperature:-55°C ~ 150°C (TJ)
• Power Dissipation (Max):317mW (Ta), 8.33W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:634pF @ 6V
• Vgs (Max):±8V
• Gate Charge (Qg) (Max) @ Vgs:12nC @ 4.5V

• Series:--
• Rds On (Max) @ Id, Vgs:72 mOhm @ 3.2A, 4.5V
• Drive Voltage (Max Rds On, Min Rds On):1.2V, 4.5V
• Current - Continuous Drain (Id) @ 25°C:3.2A (Ta)
• Drain to Source Voltage (Vdss):12V
• Technology:MOSFET (Metal Oxide)
• FET Type:P-Channel
• Part Status:Active
• Packaging:Cut Tape (CT)