QS8J2TR

Technical Details

• Series:--
• Packaging:Tape & Reel (TR) 
• Part Status:Active
• FET Type:2 P-Channel (Dual)
• FET Feature:Logic Level Gate, 1.5V Drive
• Drain to Source Voltage (Vdss):12V
• Current - Continuous Drain (Id) @ 25°C:4A
• Rds On (Max) @ Id, Vgs:36 mOhm @ 4A, 4.5V
• Vgs(th) (Max) @ Id:1V @ 1mA

• Gate Charge (Qg) (Max) @ Vgs:20nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds:1940pF @ 6V
• Power - Max:550mW
• Operating Temperature:150°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:8-SMD, Flat Lead
• Supplier Device Package:TSMT8