QS8J4TR Discrete Semiconductor Products

Technical Details

• Series:--
• Packaging:Tape & Reel (TR) 
• Part Status:Active
• FET Type:2 P-Channel (Dual)
• FET Feature:Logic Level Gate
• Drain to Source Voltage (Vdss):30V
• Current - Continuous Drain (Id) @ 25°C:4A
• Rds On (Max) @ Id, Vgs:56 mOhm @ 4A, 10V
• Vgs(th) (Max) @ Id:2.5V @ 1mA

• Gate Charge (Qg) (Max) @ Vgs:13nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds:800pF @ 10V
• Power - Max:550mW
• Operating Temperature:150°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:8-SMD, Flat Lead
• Supplier Device Package:TSMT8