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RN1406S,LF(D

Toshiba Semiconductor and Storage
RN1406S,LF(D HongDa Electronics RN1406S,LF(D
  • Manufacturer Part# RN1406S,LF(D
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionTRANS PREBIAS NPN 0.2W SMINI
  • More DetailPre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
In Stock: 1000

Can ship immediately

Datasheet:
RN1406S,LF(D Datasheet

Technical Details

  • Series:--
  • Packaging:Tape & Reel (TR) 
  • Part Status:Obsolete
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):4.7 kOhms
  • Resistor - Emitter Base (R2):47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 10mA, 5V

 

  • Vce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:250MHz
  • Power - Max:200mW
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:S-Mini

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