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RN1427TE85LF

Toshiba Semiconductor and Storage
RN1427TE85LF HongDa Electronics RN1427TE85LF
  • Manufacturer Part# RN1427TE85LF
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionTRANS PREBIAS NPN 200MW SMINI
  • More DetailPre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
In Stock: 1000

Can ship immediately

Datasheet:
RN1427TE85LF Datasheet

Technical Details

  • DC Current Gain (hFE) (Min) @ Ic, Vce:90 @ 100mA, 1V
  • Base Part Number:RN142*
  • Supplier Device Package:S-Mini
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Mounting Type:Surface Mount
  • Power - Max:200mW
  • Frequency - Transition:300MHz
  • Current - Collector Cutoff (Max):500nA
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 1mA, 50mA

 

  • Series:--
  • Resistor - Emitter Base (R2):10 kOhms
  • Resistor - Base (R1):2.2 kOhms
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Current - Collector (Ic) (Max):800mA
  • Transistor Type:NPN - Pre-Biased
  • Part Status:Active
  • Packaging:Tape & Reel (TR) 

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