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SI5429DU-T1-GE3

Vishay Siliconix
SI5429DU-T1-GE3 HongDa Electronics SI5429DU-T1-GE3
  • Manufacturer Part# SI5429DU-T1-GE3
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET P-CH 30V 12A PWR PK
  • More DetailP-Channel 30V 12A (Tc) 3.1W (Ta), 31W (Tc) Surface...
In Stock: 1000

Can ship immediately

Datasheet:
SI5429DU-T1-GE3 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:2.2V @ 250µA
  • Package / Case:PowerPAK® ChipFET™ Dual
  • Supplier Device Package:PowerPAK® ChipFet Dual
  • Mounting Type:Surface Mount
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):3.1W (Ta), 31W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:2320pF @ 15V
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:63nC @ 10V

 

  • Series:TrenchFET®
  • Rds On (Max) @ Id, Vgs:15 mOhm @ 7A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Current - Continuous Drain (Id) @ 25°C:12A (Tc)
  • Drain to Source Voltage (Vdss):30V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:P-Channel
  • Part Status:Discontinued at Digi-Key
  • Packaging:Cut Tape (CT) 

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