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SI5475DDC-T1-GE3

Vishay Siliconix
SI5475DDC-T1-GE3 HongDa Electronics SI5475DDC-T1-GE3
  • Manufacturer Part# SI5475DDC-T1-GE3
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET P-CH 12V 6A 1206-8
  • More DetailP-Channel 12V 6A (Tc) 2.3W (Ta), 5.7W (Tc) Surface...
In Stock: 1000

Can ship immediately

Datasheet:
SI5475DDC-T1-GE3 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:1V @ 250µA
  • Package / Case:8-SMD, Flat Lead
  • Supplier Device Package:1206-8 ChipFET™
  • Mounting Type:Surface Mount
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):2.3W (Ta), 5.7W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:1600pF @ 6V
  • Vgs (Max):±8V
  • Gate Charge (Qg) (Max) @ Vgs:50nC @ 8V

 

  • Series:TrenchFET®
  • Rds On (Max) @ Id, Vgs:32 mOhm @ 5.4A, 4.5V
  • Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
  • Current - Continuous Drain (Id) @ 25°C:6A (Tc)
  • Drain to Source Voltage (Vdss):12V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:P-Channel
  • Part Status:Last Time Buy
  • Packaging:Tape & Reel (TR) 

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