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SI7820DN-T1-GE3

Vishay Siliconix
SI7820DN-T1-GE3 HongDa Electronics SI7820DN-T1-GE3
  • Manufacturer Part# SI7820DN-T1-GE3
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 200V 1.7A 1212-8
  • More DetailN-Channel 200V 1.7A (Ta) 1.5W (Ta) Surface Mount P...
In Stock: 48000

Can ship immediately

Datasheet:
SI7820DN-T1-GE3 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Package / Case:PowerPAK® 1212-8
  • Supplier Device Package:PowerPAK® 1212-8
  • Mounting Type:Surface Mount
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):1.5W (Ta)
  • FET Feature:--
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:18nC @ 10V
  • Series:TrenchFET®

 

  • Rds On (Max) @ Id, Vgs:240 mOhm @ 2.6A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):6V, 10V
  • Current - Continuous Drain (Id) @ 25°C:1.7A (Ta)
  • Drain to Source Voltage (Vdss):200V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active
  • Packaging:Tape & Reel (TR) 

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