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SI7882DP-T1-E3

Vishay Siliconix
SI7882DP-T1-E3 HongDa Electronics SI7882DP-T1-E3
  • Manufacturer Part# SI7882DP-T1-E3
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 12V 13A PPAK SO-8
  • More DetailN-Channel 12V 13A (Ta) 1.9W (Ta) Surface Mount Pow...
In Stock: 1000

Can ship immediately

Datasheet:
SI7882DP-T1-E3 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:1.4V @ 250µA
  • Package / Case:PowerPAK® SO-8
  • Supplier Device Package:PowerPAK® SO-8
  • Mounting Type:Surface Mount
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):1.9W (Ta)
  • FET Feature:--
  • Vgs (Max):±8V
  • Gate Charge (Qg) (Max) @ Vgs:30nC @ 4.5V
  • Series:TrenchFET®

 

  • Rds On (Max) @ Id, Vgs:5.5 mOhm @ 17A, 4.5V
  • Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
  • Current - Continuous Drain (Id) @ 25°C:13A (Ta)
  • Drain to Source Voltage (Vdss):12V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Obsolete
  • Packaging:Tape & Reel (TR) 

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