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SIA416DJ-T1-GE3

Vishay Siliconix
SIA416DJ-T1-GE3 HongDa Electronics SIA416DJ-T1-GE3
  • Manufacturer Part# SIA416DJ-T1-GE3
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 100V 11.3A SC70-6L
  • More DetailN-Channel 100V 11.3A (Tc) 3.5W (Ta), 19W (Tc) Surf...
In Stock: 1000

Can ship immediately

Datasheet:
SIA416DJ-T1-GE3 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Package / Case:PowerPAK® SC-70-6
  • Supplier Device Package:PowerPAK® SC-70-6 Single
  • Mounting Type:Surface Mount
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):3.5W (Ta), 19W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:295pF @ 50V
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:10nC @ 10V

 

  • Series:TrenchFET®
  • Rds On (Max) @ Id, Vgs:83 mOhm @ 3.2A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Current - Continuous Drain (Id) @ 25°C:11.3A (Tc)
  • Drain to Source Voltage (Vdss):100V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active
  • Packaging:Tape & Reel (TR) 

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