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SIA427DJ-T1-GE3

Vishay Siliconix
SIA427DJ-T1-GE3 HongDa Electronics SIA427DJ-T1-GE3
  • Manufacturer Part# SIA427DJ-T1-GE3
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET P-CH 8V 12A SC-70-6
  • More DetailP-Channel 8V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface ...
In Stock: 1000

Can ship immediately

Datasheet:
SIA427DJ-T1-GE3 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:800mV @ 250µA
  • Package / Case:PowerPAK® SC-70-6
  • Supplier Device Package:PowerPAK® SC-70-6 Single
  • Mounting Type:Surface Mount
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):3.5W (Ta), 19W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:2300pF @ 4V
  • Vgs (Max):±5V
  • Gate Charge (Qg) (Max) @ Vgs:50nC @ 5V

 

  • Series:TrenchFET®
  • Rds On (Max) @ Id, Vgs:16 mOhm @ 8.2A, 4.5V
  • Drive Voltage (Max Rds On, Min Rds On):1.2V, 4.5V
  • Current - Continuous Drain (Id) @ 25°C:12A (Tc)
  • Drain to Source Voltage (Vdss):8V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:P-Channel
  • Part Status:Active
  • Packaging:Tape & Reel (TR) 

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