• Manufacturer Part# SIS407DN-T1-GE3
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET P-CH 20V 25A 1212-8 PPAK
  • More DetailP-Channel 20V 25A (Tc) 3.6W (Ta), 33W (Tc) Surface...
In Stock: 1000

Can ship immediately

Technical Details

  • Vgs(th) (Max) @ Id:1V @ 250µA
  • Package / Case:PowerPAK® 1212-8
  • Supplier Device Package:PowerPAK® 1212-8
  • Mounting Type:Surface Mount
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):3.6W (Ta), 33W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:2760pF @ 10V
  • Vgs (Max):±8V
  • Gate Charge (Qg) (Max) @ Vgs:93.8nC @ 8V

 

  • Series:TrenchFET®
  • Rds On (Max) @ Id, Vgs:9.5 mOhm @ 15.3A, 4.5V
  • Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
  • Current - Continuous Drain (Id) @ 25°C:25A (Tc)
  • Drain to Source Voltage (Vdss):20V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:P-Channel
  • Part Status:Active
  • Packaging:Tape & Reel (TR) 

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