• Manufacturer Part# SIS412DN-T1-GE3
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 30V 12A 1212-8 PPAK
  • More DetailN-Channel 30V 12A (Tc) 3.2W (Ta), 15.6W (Tc) Surfa...
In Stock: 75000

Can ship immediately

Technical Details

  • Vgs(th) (Max) @ Id:2.5V @ 250µA
  • Package / Case:PowerPAK® 1212-8
  • Supplier Device Package:PowerPAK® 1212-8
  • Mounting Type:Surface Mount
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):3.2W (Ta), 15.6W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:435pF @ 15V
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:12nC @ 10V

 

  • Series:TrenchFET®
  • Rds On (Max) @ Id, Vgs:24 mOhm @ 7.8A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Current - Continuous Drain (Id) @ 25°C:12A (Tc)
  • Drain to Source Voltage (Vdss):30V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active
  • Packaging:Tape & Reel (TR) 

Related Products

Search "SIS4" Included word is 33

Latest Products

Top