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SISS02DN-T1-GE3

Vishay Siliconix
SISS02DN-T1-GE3 HongDa Electronics SISS02DN-T1-GE3
  • Manufacturer Part# SISS02DN-T1-GE3
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CHAN 25V POWERPAK 1212-
  • More DetailN-Channel 25V 51A (Ta), 80A (Tc) 5W (Ta), 65.7W (T...
In Stock: 1000

Can ship immediately

Datasheet:
SISS02DN-T1-GE3 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:2.2V @ 250µA
  • Package / Case:PowerPAK® 1212-8S
  • Supplier Device Package:PowerPAK® 1212-8S
  • Mounting Type:Surface Mount
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):5W (Ta), 65.7W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:4450pF @ 10V
  • Vgs (Max):+16V, -12V
  • Gate Charge (Qg) (Max) @ Vgs:83nC @ 10V

 

  • Series:TrenchFET® Gen IV
  • Rds On (Max) @ Id, Vgs:1.2 mOhm @ 15A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Current - Continuous Drain (Id) @ 25°C:51A (Ta), 80A (Tc)
  • Drain to Source Voltage (Vdss):25V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active
  • Packaging:Tape & Reel (TR) 

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