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SISS70DN-T1-GE3

Vishay Siliconix
SISS70DN-T1-GE3 HongDa Electronics SISS70DN-T1-GE3
  • Manufacturer Part# SISS70DN-T1-GE3
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 125V
  • More DetailN-Channel 125V 8.5A (Ta), 31A (Tc) 5.1W (Ta), 65.8...
In Stock: 1000

Can ship immediately

Datasheet:
SISS70DN-T1-GE3 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:4.5V @ 250µA
  • Package / Case:PowerPAK® 1212-8S
  • Supplier Device Package:PowerPAK® 1212-8S
  • Mounting Type:Surface Mount
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):5.1W (Ta), 65.8W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:535pF @ 62.5V
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:15.3nC @ 10V

 

  • Series:TrenchFET®
  • Rds On (Max) @ Id, Vgs:29.8 mOhm @ 8.5A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:8.5A (Ta), 31A (Tc)
  • Drain to Source Voltage (Vdss):125V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active
  • Packaging:Tape & Reel (TR) 

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