SIZ900DT-T1-GE3

Technical Details

• Vgs(th) (Max) @ Id:2.4V @ 250µA
• Base Part Number:SIZ900
• Supplier Device Package:6-PowerPair™
• Package / Case:6-PowerPair™
• Mounting Type:Surface Mount
• Operating Temperature:-55°C ~ 150°C (TJ)
• Power - Max:48W, 100W
• Input Capacitance (Ciss) (Max) @ Vds:1830pF @ 15V
• Gate Charge (Qg) (Max) @ Vgs:45nC @ 10V

• Series:TrenchFET®
• Rds On (Max) @ Id, Vgs:7.2 mOhm @ 19.4A, 10V
• Current - Continuous Drain (Id) @ 25°C:24A, 28A
• Drain to Source Voltage (Vdss):30V
• FET Feature:Logic Level Gate
• FET Type:2 N-Channel (Half Bridge)
• Part Status:Active
• Packaging:Tape & Reel (TR)