SIZ926DT-T1-GE3

Technical Details

• Series:TrenchFET® Gen IV
• Packaging:Tape & Reel (TR) 
• Part Status:Active
• FET Type:2 N-Channel (Dual)
• FET Feature:Standard
• Drain to Source Voltage (Vdss):25V
• Current - Continuous Drain (Id) @ 25°C:40A (Tc), 60A (Tc)
• Rds On (Max) @ Id, Vgs:4.8 mOhm @ 5A, 10V, 2.2 mOhm @ 8A, 10V
• Vgs(th) (Max) @ Id:2.2V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:19nC @ 10V, 41nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds:925pF @ 10V, 2150pF @ 10V
• Power - Max:20.2W, 40W
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:8-PowerWDFN
• Supplier Device Package:8-PowerPair® (6x5)