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SPI10N10L

Infineon Technologies
SPI10N10L HongDa Electronics SPI10N10L
  • Manufacturer Part# SPI10N10L
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 100V 10.3A I2PAK
  • More DetailN-Channel 100V 10.3A (Tc) 50W (Tc) Through Hole PG...
In Stock: 1000

Can ship immediately

Datasheet:
SPI10N10L Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:2V @ 21µA
  • Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
  • Supplier Device Package:PG-TO262-3-1
  • Mounting Type:Through Hole
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Power Dissipation (Max):50W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:444pF @ 25V
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:22nC @ 10V

 

  • Series:SIPMOS®
  • Rds On (Max) @ Id, Vgs:154 mOhm @ 8.1A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Current - Continuous Drain (Id) @ 25°C:10.3A (Tc)
  • Drain to Source Voltage (Vdss):100V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Obsolete
  • Packaging:Tube 

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