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SPI15N65C3HKSA1

Infineon Technologies
SPI15N65C3HKSA1 HongDa Electronics SPI15N65C3HKSA1
  • Manufacturer Part# SPI15N65C3HKSA1
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 650V 15A TO262-3
  • More DetailN-Channel 650V 15A (Tc) 156W (Tc) Through Hole PG-...
In Stock: 1000

Can ship immediately

Datasheet:
SPI15N65C3HKSA1 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:3.9V @ 675µA
  • Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
  • Supplier Device Package:PG-TO262-3-1
  • Mounting Type:Through Hole
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):156W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:1600pF @ 25V
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:63nC @ 10V

 

  • Series:CoolMOS™
  • Rds On (Max) @ Id, Vgs:280 mOhm @ 9.4A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:15A (Tc)
  • Drain to Source Voltage (Vdss):650V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Obsolete
  • Packaging:Tube 

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